Name: Doping in Iii-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (en Inglés)
Price: 557.06 PEN
Availability: InStock
Author: E. F. Schubert
ISBN: 9780521017848

portada Doping in Iii-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (en Inglés)

Formato

Libro Físico

Editorial

Cambridge University Press

Autor

E. F. Schubert

Año

2005

Idioma

Inglés

N° páginas

632

Encuadernación

Tapa Blanda

ISBN

052101784x

ISBN13

9780521017848

N° edición

Categorías

Física

Doping in Iii-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (en Inglés)

E. F. Schubert (Autor) · Cambridge University Press · Tapa Blanda

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Reseña del libro "Doping in Iii-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering) (en Inglés)"

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.